Analysis of a novel Si1-xGex/Si heterojunction stacked oxide double-gate tunnel field-effect transistor with asymmetry structure for improved DC and analog/RF performance

In this work, a novel Si1-xGex/Si heterojunction and stacked oxide doublegate tunnel field-effect transistor with asymmetry structure (ASHJSO-DGTFET) is proposed and investigated by TCAD simulation. As a contrastive study, the DC and analog/RF performance of silicon-based double gate tunnel field-effect transistors with asymmetry structure (ASSi-DGTFETs) is also discussed. Compared to ASSi-DGTFETs, ASHJSO-DGTFET maintains lower off/ambipolar-state current and obtains higher on-state current. The simulation results reveal that the on-state current, switching ratio, and minimum SS of the optimal ASHJSO-DGTFET are 5.27 x 10-5 A/mu m, 0.64 x 1012, and 12.3 mV/dec, respectively. Moreover, the maximum gds, gm, integral T and GBW of ASHJSODGTFET are 85 mu S/mu m, 172 mu S/mu m, 54.5 GHz and 9.8 GHz, respectively. Therefore, the proposed ASHJSODGTFET is more suitable for the ultra-low power integrated circuits.