Quantum and classical size effects on thermoelectric transport in Si/Ge superlattices

被引：3
|
作者：
Liu, WL [1 ]
Chen, G [1 ]
Liu, JL [1 ]
Wang, KL [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA 90095 USA
来源：
XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02 | 2002年
关键词：
thermoelectrics; superlattices; Boltzman equation; low-dimensionality;
D O I：
10.1109/ICT.2002.1190282
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Quantum size effect thermoelectric enhancement has been intensively investigated. However, the electronic transport along the in-plane direction is also affected by interface scattering that can be attributed to classical size effect. It has been observed that interface scattering sometimes greatly degrade low-dimensional thermoelectric enhancement. To have a complete understanding of the transport with both quantum and classical size effect, we conduct experimental investigation of in-plane thermoelectric properties on Si/Ge superlattices and theoretical characterization of those properties with electron Boltzmann transport model. In this paper, we will report the experimental result and comparison with the modeling.
引用
收藏
页码：130 / 134
页数：5
相关论文
共 50 条
  • [31] Size-selective Raman scattering in self-assembled Ge/Si quantum dot superlattices
    Milekhin, AG
    Nikiforov, AI
    Pchelyakov, OP
    Schulze, S
    Zahn, DRT
    [J]. NANOTECHNOLOGY, 2002, 13 (01) : 55 - 58
  • [32] Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(001)
    Thumfart, L.
    Carrete, J.
    Vermeersch, B.
    Ye, N.
    Truglas, T.
    Feser, J.
    Groiss, H.
    Mingo, N.
    Rastelli, A.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (01)
  • [33] Thermoelectric Generators of Sequentially Deposited Si/Si plus Ge Nano-Layered Superlattices
    Smith, C.
    Pugh, M.
    Martin, H.
    Hill, R.
    James, B.
    Budak, S.
    Heidary, K.
    Muntele, C.
    Ila, D.
    [J]. ION BEAMS AND NANO-ENGINEERING, 2010, 1181 : 41 - +
  • [34] Raman study of Ge quantum dots formed by submonolayer Ge coverages in Ge/Si superlattices
    Volodin, VA
    Orehov, DA
    Efremov, MD
    Sachkov, VA
    Kolesov, BA
    Zakharov, ND
    Egorov, VA
    Cirlin, GE
    Werner, P
    [J]. 10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, 2003, 5023 : 161 - 164
  • [35] Effects of Strains on Thermal Conductivity of Si/Ge Superlattices
    Xingli Zhang
    Cuizhi Gong
    Guoqiang Wu
    [J]. Journal of Wuhan University of Technology-Mater. Sci. Ed., 2018, 33 : 1051 - 1055
  • [36] Effects of Strains on Thermal Conductivity of Si/Ge Superlattices
    张兴丽
    GONG Cuizhi
    WU Guoqiang
    [J]. Journal of Wuhan University of Technology(Materials Science), 2018, 33 (05) : 1051 - 1055
  • [37] Transport properties and thermoelectric effects in gated silicene superlattices
    Guzman, E. J.
    Navarro, O.
    Oubram, O.
    Rodriguez-Vargas, I.
    [J]. JOURNAL OF APPLIED PHYSICS, 2018, 124 (14)
  • [38] Effects of Strains on Thermal Conductivity of Si/Ge Superlattices
    Zhang Xingli
    Gong Cuizhi
    Wu Guoqiang
    [J]. JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2018, 33 (05): : 1051 - 1055
  • [39] Effects of disorder on the transport and thermoelectric properties of silicene superlattices
    Oubram, O.
    Navarro, O.
    Guzman, E. J.
    Rodriguez-Vargas, I.
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2020, 120
  • [40] Lateral superlattices: Classical, semi-classical, and quantum mechanical transport phenomena
    Ensslin, K
    Schuster, R
    Schlosser, T
    [J]. FRONTIERS IN NANOSCALE SCIENCE OF MICRON/SUBMICRON DEVICES, 1996, 328 : 419 - 438
12345