Effects of Strains on Thermal Conductivity of Si/Ge Superlattices

被引：0
|
作者：
Zhang Xingli [1 ]
Gong Cuizhi [1 ]
Wu Guoqiang [2 ]
机构：
[1] Northeast Forestry Univ, Coll Mech & Elect Engn, Harbin 150040, Heilongjiang, Peoples R China
[2] Dalian Univ Technol, State Key Lab Struct Anal Ind Equipment, Dalian 116024, Peoples R China
来源：
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION | 2018年 / 33卷 / 05期
基金：
中国国家自然科学基金;
关键词：
thermal conductivity; strains; nonequilibrium molecular dynamics; Si/Ge superlattics; MOLECULAR-DYNAMICS; GRAPHENE NANORIBBONS; NANOSCALE; SIMULATIONS; TRANSPORT;
D O I：
10.1007/s11595-018-1933-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of strains on the thermal conductivity of Si/Ge superlattices was investigated by nonequilibrium molecular dynamics NEMD) simulation. The thermal conductivities experienced a near linear drop with increasing tensile and compressive strains. It was explained by the fact that the decrease of the phonons velocities and a mass of structural defects generated under strains. Meanwhile, a theoretical calculation based on Modified-Callaway model was performed, and it was found that the theoretical results were in good agreement with the molecular dynamics results.
引用
收藏
页码：1051 / 1055
页数：5
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