Thermoelectric Generators of Sequentially Deposited Si/Si plus Ge Nano-Layered Superlattices

Effective thermoelectric materials have a low thermal conductivity and a high electrical conductivity. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S-2 sigma/K-TC, a is the electrical conductivity T/K-TC, where S is the Seebeck coefficient, T is the absolute temperature and K-TC is the thermal conductivity. In this study we have prepared the thermoelectric generator device of Si/Si+Ge multi-layer superlattice films using electron beam physical vapor deposition (EB-PVD). 5 MeV Si ion bombardment was performed in the multi-layer superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity.