Raman study of Ge quantum dots formed by submonolayer Ge coverages in Ge/Si superlattices

被引：0
|
作者：
Volodin, VA [1 ]
Orehov, DA [1 ]
Efremov, MD [1 ]
Sachkov, VA [1 ]
Kolesov, BA [1 ]
Zakharov, ND [1 ]
Egorov, VA [1 ]
Cirlin, GE [1 ]
Werner, P [1 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY | 2003年 / 5023卷
关键词：
Raman scattering; quantum dots; germanium; silicon;
D O I：
10.1117/12.511853
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：161 / 164
页数：4
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