Intersubband absorption at λ ∼ 2.1 μm in A-plane GaN/AlN multiple quantum wells

被引：22

作者：

Gmachl, C ^{[1
]}

Ng, HM ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 06期

关键词：

D O I：

10.1049/el:20030381

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intersubband optical absorption at lambdasimilar to2.1 mum wavelength in doped 17.5 Angstrom wide GaN quantum wells (QWs) with 51 Angstrom wide intermediate AlN barriers is reported. A similar to600 nm thick GaN template and 15 QWs have been grown by molecular beam epitaxy on R-plane sapphire substrate and display pure A-plane orientation. QWs with A-plane orientation are essentially free from spontaneous polarisation, which is expected to greatly simplify the design of GaN/Al(Ga)N devices employing intersubband transitions.

引用

页码：567 / 569

页数：3

共 50 条

[41] Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells
Machhadani, H.
Beeler, M.
Sakr, S.
Warde, E.
Kotsar, Y.
Tchernycheva, M.
Chauvat, M. P.
Ruterana, P.
Nataf, G.
De Mierry, Ph
Monroy, E.
Julien, F. H.
JOURNAL OF APPLIED PHYSICS, 2013, 113 (14)
[42] Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
Iizuka, N
Kaneko, K
Suzuki, N
APPLIED PHYSICS LETTERS, 2002, 81 (10) : 1803 - 1805
[43] Characteristics of Polarized Light Emission in a-Plane GaN-Based Multiple Quantum Wells
Chang, Chiao-Yun
Huang, Huei-Min
Lai, Chih Ming
Lu, Tien-Chang
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 48 (07) : 867 - 871
[44] Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy
Waki, I
Kumtornkittikul, C
Shimogaki, Y
Nakano, Y
APPLIED PHYSICS LETTERS, 2003, 82 (25) : 4465 - 4467
[45] Electronic and optical properties of nonpolar a-plane GaN quantum wells
Schulz, S.
Badcock, T. J.
Moram, M. A.
Dawson, P.
Kappers, M. J.
Humphreys, C. J.
O'Reilly, E. P.
PHYSICAL REVIEW B, 2010, 82 (12)
[46] Intersubband absorption at normal incidence by m-plane ZnO/MgZnO Quantum Wells
Montes Bajo, M.
Tamayo-Arriola, J.
Le Biavan, N.
Ulloa, J. M.
Vennegues, P.
Lefebvre, D.
Hugues, M.
Chauveau, J-M
Hierro, A.
OXIDE-BASED MATERIALS AND DEVICES X, 2019, 10919
[47] Optically pumped intersubband light emission near 2 μm from GaN/AlN quantum wells
Driscoll, K.
Liao, Y.
Bhattacharyya, A.
Moustakas, T. D.
Paiella, R.
Zhou, L.
Smith, D. J.
2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2, 2009, : 664 - +
[48] Short wavelength (λ=2.13 μm) intersubband luminescence from GaN/AlN quantum wells at room temperature
Nevou, L.
Tchernycheva, M.
Julien, F. H.
Guillot, F.
Monroy, E.
APPLIED PHYSICS LETTERS, 2007, 90 (12)
[49] Intersubband absorption in strained AlGaN/GaN double quantum wells
Ha, S. H.
Ban, S. L.
Zhu, J.
PHYSICA B-CONDENSED MATTER, 2011, 406 (19) : 3640 - 3645
[50] Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells
Kotani, Teruhisa
Arita, Munetaka
Arakawa, Yasuhiko
APPLIED PHYSICS LETTERS, 2015, 107 (11)

← 1 2 3 4 5 →