Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy

被引：191

作者：

Iizuka, N ^{[1
]}

Kaneko, K ^{[1
]}

Suzuki, N ^{[1
]}

机构：

[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 10期

关键词：

D O I：

10.1063/1.1505116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN/AlN multiple-quantum-well structures were grown by molecular beam epitaxy. Abrupt interfaces and good periodicity were confirmed. Absorption measurements indicated that intersubband absorptions occurred at wavelengths of 1.3-2.2 mum. Spectral fits by Lorentzians suggested that the well thicknesses fluctuated by two monolayers. The linewidths of the individual fits were as narrow as 80-120 meV. The characteristics of the absorption saturation were investigated at a wavelength of 1.46 mum. A relaxation time of 400 fs and saturation energy density of 0.5 pJ/mum2 were obtained. These results are promising for realizing ultrafast optical switches with energy consumption of the picojoule order. (C) 2002 American Institute of Physics.

引用

页码：1803 / 1805

页数：3

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