Intersubband absorption at λ ∼ 2.1 μm in A-plane GaN/AlN multiple quantum wells

被引：22

作者：

Gmachl, C ^{[1
]}

Ng, HM ^{[1
]}

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 06期

关键词：

D O I：

10.1049/el:20030381

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intersubband optical absorption at lambdasimilar to2.1 mum wavelength in doped 17.5 Angstrom wide GaN quantum wells (QWs) with 51 Angstrom wide intermediate AlN barriers is reported. A similar to600 nm thick GaN template and 15 QWs have been grown by molecular beam epitaxy on R-plane sapphire substrate and display pure A-plane orientation. QWs with A-plane orientation are essentially free from spontaneous polarisation, which is expected to greatly simplify the design of GaN/Al(Ga)N devices employing intersubband transitions.

引用

页码：567 / 569

页数：3

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