Intersubband Transition at 1.52 μm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy

被引：9
|
作者：
Sodabanlu, Hassanet [1 ]
Yang, Jung-Seung [2 ]
Sugiyama, Masakazu [1 ,3 ]
Shimogaki, Yukihiro [2 ]
Nakano, Yoshiaki [1 ,4 ]
机构：
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Univ Tokyo, Dept Mat Engn, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan
[3] Univ Tokyo, Inst Engn Innovat, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan
[4] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan
来源：
APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 06期
关键词：
MOLECULAR-BEAM EPITAXY; WAVELENGTH; GAN; SUPERLATTICES; ABSORPTION;
D O I：
10.1143/APEX.2.061002
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have achieved the intersubband transition at 1.52 mu m in metal organic vapor phase epitaxy (MOVPE) grown 40-period GaN (1.4 nm)/AlN (4.3 nm) multiple quantum wells (MQWs). Two breakthroughs led us to this achievement: (1) the low temperature growth of MQWs at 830 degrees C on a high-quality AlGaN/AlN template grown at higher temperatures led to excellent GaN/AlN interfaces, and (2) reduction of carbon impurity in the GaN wells by pulse injection method resulted in a carrier density as high as 2 x 10(19) cm(-3) in spite of the low temperature growth. A strong absorption peak at 1.52 mu m with a full-width at half-maximum of 113meV was clearly observed at room temperature. (C) 2009 The Japan Society of Applied Physics
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页数：3
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