Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

被引：21
|
作者：
Kotani, Teruhisa [1 ,2 ,3 ]
Arita, Munetaka [1 ]
Arakawa, Yasuhiko [1 ,2 ]
机构：
[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
[2] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[3] Sharp Co Ltd, Adv Technol Res Labs, Tenri, Nara 6328567, Japan
来源：
APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 11期
关键词：
EXCHANGE INTERACTIONS; INTERFACE ROUGHNESS; OPTICAL-TRANSITIONS; INVERSION-LAYERS; SCATTERING; NONPARABOLICITY; ELECTRONS; ENERGY; GAS;
D O I：
10.1063/1.4931096
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Blue shift and broadening of the absorption spectra of mid-infrared intersubband transition in nonpolar m-plane AlGaN/GaN 10 quantum wells were observed with increasing doping density. As the doping density was increased from 6.6 x 10(11) to 6.0 x 10(12) cm(-2) per a quantum well, the intersubband absorption peak energy shifted from 274.0 meV to 302.9 meV, and the full width at half maximum increased from 56.4 meV to 112.4 meV. Theoretical calculations reveal that the blue shift is due to many body effects, and the intersubband linewidth in doped AlGaN/GaN QW is mainly determined by scattering due to interface roughness, LO phonons, and ionized impurities. (C) 2015 AIP Publishing LLC.
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页数：4
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