Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

被引：43

作者：

Edmunds, C. ^{[1
]}

Shao, J. ^{[1
,2
]}

Shirazi-HD, M. ^{[2
,3
]}

Manfra, M. J. ^{[1
,2
,3
,4
]}

Malis, O. ^{[1
]}

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[4] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 02期

基金：

美国国家科学基金会;

关键词：

CASCADE LASERS;

D O I：

10.1063/1.4890611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate THz intersubband absorption (15.6-26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a similar to 40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers. (C) 2014 AIP Publishing LLC.

引用

页数：4

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