Optical analysis of non-polar, m-plane GaN/AlGaN quantum cascade structures

被引：0
|
作者：
Saha, Sumit [1 ]
Mech, Bhubon Chandra [1 ]
Hussain, Saddam [1 ]
Kumar, Jitendra [1 ]
机构：
[1] Indian Inst Technol, Indian Sch Mines, Dept Elect Engn, Dhanbad 826004, Jharkhand, India
来源：
17TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES NUSOD 2017 | 2017年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A quantum cascade structure (QCS) for the mid-infrared (IR) photon detection has been designed using non-polar, m-plane III-nitride material system. The effect of temperature and active layer doping on the absorption coefficient has been studied theoretically for the designed QCS.
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页码：153 / 154
页数：2
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