Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

被引：23
|
作者：
Rosales, D. [1 ,2 ]
Gil, B. [1 ,2 ]
Bretagnon, T. [1 ,2 ]
Guizal, B. [1 ,2 ]
Zhang, F. [3 ]
Okur, S. [3 ]
Monavarian, M. [3 ]
Izyumskaya, N. [3 ]
Avrutin, V. [3 ]
Ozguer, Ue [3 ]
Morkoc, H. [3 ]
Leach, J. H. [4 ]
机构：
[1] CNRS, Lab Charles Coulomb, UMR 5221, F-34095 Montpellier, France
[2] Univ Montpellier 2, Lab Charles Coulomb, UMR 5221, F-34095 Montpellier, France
[3] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23238 USA
[4] Kyma Technol, Raleigh, NC 27617 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 07期
基金：
美国国家科学基金会;
关键词：
GAN FILMS; PIEZOELECTRIC FIELDS; OPTICAL ANISOTROPY; PLANE GAN; SAPPHIRE; GROWTH; ALGAN; SUBSTRATE; HVPE;
D O I：
10.1063/1.4865959
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells are examined in 8K-300K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells. (C) 2014 AIP Publishing LLC.
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页数：8
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