Optically pumped intersubband light emission near 2 μm from GaN/AlN quantum wells

被引：0
|
作者：
Driscoll, K. [1 ]
Liao, Y. [1 ]
Bhattacharyya, A. [1 ]
Moustakas, T. D. [1 ]
Paiella, R. [1 ]
Zhou, L. [2 ]
Smith, D. J. [2 ]
机构：
[1] Boston Univ, Dept Elect & Comp Engn, 8 St Marys St, Boston, MA 02215 USA
[2] Arizona State Univ, Dept Phys & Sch Mat, Tempe, AZ 85287 USA
来源：
2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 | 2009年
基金：
美国国家科学基金会;
关键词：
ABSORPTION;
D O I：
10.1109/LEOS.2009.5343394
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Intersubband light emission at record short wavelengths near 2 mu m is obtained with GaN/AlN quantum wells, via optical pumping from the ground-state to the second-excited subband followed by radiative relaxation into the first-excited subband.
引用
收藏
页码：664 / +
页数：2
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