Bipolar resistive switching with negative differential resistance effect in a Cu/BaTiO3/Ag device

被引：31
|
作者：
Wei, L. J. [1 ,2 ]
Yuan, Y. [1 ,2 ]
Wang, J. [1 ,2 ]
Tu, H. Q. [1 ,2 ,3 ]
Gao, Y. [1 ,2 ]
You, B. [1 ,2 ,4 ]
Du, J. [1 ,2 ,4 ]
机构：
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Inst Technol, Dept Math & Phys, Nanjing 211167, Jiangsu, Peoples R China
[4] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
来源：
PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2017年 / 19卷 / 19期
关键词：
MEMORY; BATIO3; NANOWIRES; FILMS;
D O I：
10.1039/c7cp01461a
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We demonstrate that a bipolar non-volatile resistive switching behaviour with negative differential resistance (NDR) effect is realized in a Cu/BaTiO3/Ag device, which was deposited on a Si substrate via magnetron sputtering equipment. We suggest that the bipolar resistive switching is dominated by the trapping/ detrapping of electrons at the BaTiO3-Cu interface. In addition, we demonstrate that the device exhibits good performance, including a large on/off ratio, high reliability and long retention time. Therefore, BaTiO3 may become a good candidate for application in resistive switching random access memory (RRAM) devices.
引用
收藏
页码：11864 / 11868
页数：5
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