Growth and self-assembly of BaTiO3 nanocubes for resistive switching memory cells

被引:15
|
作者
Chu, Dewei [1 ]
Lin, Xi [1 ]
Younis, Adnan [1 ]
Li, Chang Ming [2 ]
Dang, Feng [3 ]
Li, Sean [1 ]
机构
[1] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia
[2] Southwest Univ, Inst Clean Energy & Adv Mat, Chongqing Key Lab Adv Mat & Clean Energies Techon, Chongqing, Peoples R China
[3] Nagoya Univ, MBT Ctr, Res Ctr Mat Back Casting Technol, Nagoya, Aichi 4648603, Japan
基金
澳大利亚研究理事会;
关键词
Self-assembly; Resistive switching; Barium titanate; RESISTANCE;
D O I
10.1016/j.jssc.2013.10.049
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
In this work, the self-assembled BaTiO3 nanocubes based resistive switching memory capacitors are fabricated with hydrothermal and drop-coating approaches. The device exhibits excellent bipolar resistance switching characteristics with ON/OFF ratio of 58-70, better reliability and stability over various polycrystalline BaTiO3 nanostructures. It is believed that the inter cube junctions is responsible for such a switching behaviour and it can be described by the filament model. The effect of film thickness on switching ratio (ON/OFF) was also investigated in details. (C) 2013 Elsevier Inc. All rights reserved.
引用
收藏
页码:38 / 41
页数:4
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