Electric-field induced transition of resistive switching behaviors in BaTiO3/Co:BaTiO3/BaTiO3 trilayers

被引：10
|
作者：
Li, S. [1 ]
Wei, X. H. [1 ]
Zeng, H. Z. [2 ]
机构：
[1] Southwest Univ Sci & Technol, State Key Lab Cultivat Base Nonmetal Composites &, Mianyang 621010, Peoples R China
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 13期
基金：
中国国家自然科学基金;
关键词：
MEMORY;
D O I：
10.1063/1.4822163
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electric-field induced transition of resistive switching behaviors has been demonstrated in BaTiO3/Co:BaTiO3/BaTiO3 trilayers. At low applied bias, the Au/BaTiO3/Co:BaTiO3/BaTiO3/Pt device shows bipolar resistive switching (BRS) behavior, whereas it converts to complementary resistive switching (CRS) at high applied bias due to the depletion of oxygen vacancies in BaTiO3 layer. The Schottky-like emission accompanied by trapping/detrapping process at the interfaces is likely responsible for the BRS and CRS effects in the trilayers. Furthermore, the operating current of the CRS devices can be reduced significantly by decreasing the doped layer. (C) 2013 AIP Publishing LLC.
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页数：5
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