Light-modulated resistive switching memory behavior in ZnO/BaTiO3/ZnO multilayer

被引：3
|
作者：
Wei, Lujun [1 ]
Sun, Bai [1 ]
Zhao, Wenxi [1 ]
Li, Hongwei [1 ]
Jia, Xiangjiang [1 ]
Wu, Jianhong [1 ]
Chen, Peng [1 ]
机构：
[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
来源：
MODERN PHYSICS LETTERS B | 2016年 / 30卷 / 14期
基金：
美国国家科学基金会;
关键词：
Resistive switching; ZnO/BaTiO3/ZnO; Schottky barrier; light modulation; RESISTANCE; NANOWIRES; FILMS;
D O I：
10.1142/S0217984916501414
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nanoscale structure ZnO/BaTiO3/ZnO multilayer was fabricated on silicon (Si) substrate by RF magnetron sputtering system. The light-modulated resistive switching characteristics in ZnO/BaTiO3/ZnO devices were observed. The light-modulated resistive switching shows good repeatability at room temperature.
引用
收藏
页数：8
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