The light-modified resistance switching of BaTiO3/ZnO films

被引：1
|
作者：
Tang, Yuanyuan [1 ]
Zhang, Xingwen [1 ]
Lu, Yu [1 ]
Li, Xiulin [1 ]
Chen, Peng [1 ]
机构：
[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
来源：
FUNCTIONAL MATERIALS LETTERS | 2021年 / 14卷 / 06期
基金：
美国国家科学基金会;
关键词：
Low set/reset voltage; light-modified; resistance switching; NONVOLATILE MEMORY;
D O I：
10.1142/S1793604721500259
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A light-modified resistance switching (RS) memory device with BaTiO3/ZnO structure is fabricated by radio frequency magnetron sputtering technology. The device exhibits stable resistive switching behavior in the dark and under illumination, respectively. In the dark, the device's high/low resistance ratio (R-H/R-L) is more than 10(4) at 0.1 V read voltage, and the set/reset voltage (V-set < 0.4 V, V-reset > -0.2 V) is low. The RS of the device can be modulated by white light. When the device is irradiated by white light with intensity of 250 uw/cm(2), the high/low resistance ratio is modulated from 10(4) to 10(2), and the set/reset voltage (V-set < 0.3 V, V-reset > -0.2 V) is still low.
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页数：4
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