Reproducible resistance switching for BaTiO3 thin films fabricated by RF-magnetron sputtering

被引：29
|
作者：
Jung, Chang Hwa [1 ,2 ]
Woo, Seong Ihl [1 ,2 ]
Kim, Yun Seok [3 ]
No, Kwang Soo [3 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Chem & Biomol Engn, Grad Program BK21, Taejon 305701, South Korea
[2] Korea Adv Inst Sci & Technol, CUPS, Taejon 305701, South Korea
[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 10期
关键词：
Resistance random access memory; Resistance switching; Barium titanate; Perovskite; Sputtering; X-ray diffraction; Electrical properties and measurements; DOPED SRTIO3; MEMORY; TRANSITION; INTERFACE; OXIDES;
D O I：
10.1016/j.tsf.2010.12.149
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
BaTiO3 (BTO) thin film was fabricated to investigate its non-volatile and reversible resistance switching phenomena by RF-sputtering method. The reversible resistance switching phenomenon was observed by DC voltage sweep and Pt/BTO/Pt metal-insulator-metal structure devices showed the bipolar resistance switching such as Pr0.7Ca0.3MnO3 and Cr-doped SrTiO3. The typical leakage current-voltage characteristic measurements were performed. High resistance state (HRS) and low resistance state (LRS) were maintained without power supply. The margin of the resistance between HRS and LRS is considerable during 120th cycles. The current emission mechanisms were suggested by double logarithm plot of leakage current vs. voltage. The comparison of the spreading current mapping images for two different resistance states showed that local conduction path was formed at LRS and was destroyed at HRS. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：3291 / 3294
页数：4
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