Negative differential resistance and resistance switching behaviors in BaTiO3 thin films

被引：41
|
作者：
Yang, G. [1 ,2 ]
Jia, C. H. [1 ,2 ]
Chen, Y. H. [3 ]
Chen, X. [1 ,2 ]
Zhang, W. F. [1 ,2 ]
机构：
[1] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China
[2] Henan Univ, Sch Phys & Elect, Kaifeng 475004, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 20期
基金：
中国国家自然科学基金; 中国博士后科学基金;
关键词：
DEVICE;
D O I：
10.1063/1.4878236
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The polycrystalline BaTiO3 (BTO) thin films were grown on F-doped SnO2 substrates by pulsed laser deposition. The devices show a rectification at a small voltage, while bipolar resistive switching (RS) and negative differential resistance (NDR) appear at a large voltage. Furthermore, RS remains and NDR disappears when no positive bias is applied, while both RS and NDR behaviors improve when increasing the positive bias. The electrons trapped/detrapped by interface states at Au/BTO interface are proposed to understand the above behaviors. (C) 2014 AIP Publishing LLC.
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页数：4
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