Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films

In this work, the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3 heterostructures deposited by pulsed laser deposition are investigated. The BaTiO3 films show both well-established P-E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage (V-max). At a V-max of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a V-max of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I-V curve fitting.