Epitaxial growth and resistive switching properties of BaTiO3 on (001) Si by RF sputtering

Epitaxial BaTiO3 (0 0 1) thin films with a TiN template layer have been deposited on Si(0 0 1) single crystal substrates by RF sputtering. The deposited BaTiO3 films showed a very smooth surface with a roughness of 0.75 nm. The orientation relationship was determined to be BaTiO3(0 0 1)[1 1 0]parallel to TiN(0 0 1)[1 1 0]parallel to Si(0 0 1)[1 1 0]. The microstructure and interface of the heterostructure were studied using high resolution transmission electron microscopy (HRTEM). The electron diffraction pattern confirmed the epitaxial relationship between each layer. The current-voltage (I-V) characteristics of the TiN/BaTiO3/TiN/Si sample showed a clear resistive switching. The ratio of the high resistance state to the low resistance state is 150 with an input voltage from -4.5 to 4.5V.