Magnetic field-induced bipolar resistive switching and negative differential resistance in (110)SrTiO3: Nb/ZnO heterojunctions

被引：7
|
作者：
Fang, Yinglong [1 ,2 ]
Li, Jiachen [1 ,2 ]
Chen, Yonghai [3 ,4 ]
Zhang, Weifeng [1 ,2 ]
Jia, Caihong [1 ,2 ]
机构：
[1] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China
[2] Henan Univ, Lab Low Dimens Mat Sci, Kaifeng 475004, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China
[4] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2017年 / 521卷
基金：
中国国家自然科学基金;
关键词：
Bipolar resistive switching; Negative differential resistance; THIN-FILMS; BEHAVIOR; MOS2;
D O I：
10.1016/j.physb.2017.06.047
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
(110)SrTiO3:Nb (NSTO)/ZnO heterojunctions were fabricated by magnetron sputtering. The NSTO/ZnO heterojunctions exhibit a typical rectification characteristic, and two attendant behaviors of bipolar resistive switching and negative differential resistance appear after applying a magnetic field. The ideality factor (n) increases from 3.0 to 8.8 and the density of interface state N-ss increases from 8.4x10(13) to 1.8x10(14) eV(-1).cm(-2) after applying a magnetic field. The variance of interface state density can be used to qualitatively understand the above results.
引用
收藏
页码：69 / 72
页数：4
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