Magnetic field-induced bipolar resistive switching and negative differential resistance in (110)SrTiO3: Nb/ZnO heterojunctions

被引：7
|
作者：
Fang, Yinglong [1 ,2 ]
Li, Jiachen [1 ,2 ]
Chen, Yonghai [3 ,4 ]
Zhang, Weifeng [1 ,2 ]
Jia, Caihong [1 ,2 ]
机构：
[1] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China
[2] Henan Univ, Lab Low Dimens Mat Sci, Kaifeng 475004, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China
[4] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2017年 / 521卷
基金：
中国国家自然科学基金;
关键词：
Bipolar resistive switching; Negative differential resistance; THIN-FILMS; BEHAVIOR; MOS2;
D O I：
10.1016/j.physb.2017.06.047
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
(110)SrTiO3:Nb (NSTO)/ZnO heterojunctions were fabricated by magnetron sputtering. The NSTO/ZnO heterojunctions exhibit a typical rectification characteristic, and two attendant behaviors of bipolar resistive switching and negative differential resistance appear after applying a magnetic field. The ideality factor (n) increases from 3.0 to 8.8 and the density of interface state N-ss increases from 8.4x10(13) to 1.8x10(14) eV(-1).cm(-2) after applying a magnetic field. The variance of interface state density can be used to qualitatively understand the above results.
引用
收藏
页码：69 / 72
页数：4
相关论文
共 50 条
  • [21] Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3
    Chen, X. G.
    Ma, X. B.
    Yang, Y. B.
    Chen, L. P.
    Xiong, G. C.
    Lian, G. J.
    Yang, Y. C.
    Yang, J. B.
    APPLIED PHYSICS LETTERS, 2011, 98 (12)
  • [22] FIELD-INDUCED SWITCHING OF TETRAGONAL DOMAINS IN SRTIO3 AT LOW-TEMPERATURES
    PIETRASS, B
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 9 (01): : K39 - &
  • [23] Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions
    Evgeny Mikheev
    Brian D. Hoskins
    Dmitri B. Strukov
    Susanne Stemmer
    Nature Communications, 5
  • [24] Resistive switching effect in SrTiO3-δ/Nb-doped SrTiO3 heterojunction
    Ni, M. C.
    Guo, S. M.
    Tian, H. F.
    Zhao, Y. G.
    Li, J. Q.
    APPLIED PHYSICS LETTERS, 2007, 91 (18)
  • [25] Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions
    Mikheev, Evgeny
    Hoskins, Brian D.
    Strukov, Dmitri B.
    Stemmer, Susanne
    NATURE COMMUNICATIONS, 2014, 5
  • [26] Multi-level resistive switching behaviors and retention characteristics in ZnO/Nb: SrTiO3 heterojunction
    Ren, Yong
    Li, Jiachen
    Zhang, Weifeng
    Jia, Caihong
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (40)
  • [27] Resistive switching of Pt/Nb: SrTiO3 and La0.7Sr0.3MnO3/Nb:SrTiO3 structures
    Dong, Chengang
    Han, Xiaowei
    Wang, Zhiquan
    Liu, Dongqing
    FUNCTIONAL MATERIALS LETTERS, 2025, 18 (01)
  • [28] Negative differential resistance induced by Mn substitution at SrRuO3/Nb:SrTiO3 Schottky interfaces
    Hikita, Yasuyuki
    Kourkoutis, Lena Fitting
    Susaki, Tomofumi
    Muller, David A.
    Takagi, Hidenori
    Hwang, Harold Y.
    PHYSICAL REVIEW B, 2008, 77 (20):
  • [29] Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature
    Pengfei Wang
    Hui Zhu
    Yingqiao Zhang
    Shiwei Feng
    Chunsheng Guo
    Yamin Zhang
    Xiao Meng
    Qiong Qi
    Journal of Wuhan University of Technology-Mater. Sci. Ed., 2018, 33 : 1360 - 1364
  • [30] Bipolar Resistive Switching Characteristic of Epitaxial NiO Thin Film on Nb-Doped SrTiO3 Substrate
    Zhu, Yongdan
    Li, Meiya
    ADVANCES IN CONDENSED MATTER PHYSICS, 2012, 2012
12345