Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3

被引：126
|
作者：
Chen, X. G. [1 ]
Ma, X. B. [1 ]
Yang, Y. B. [1 ]
Chen, L. P. [1 ]
Xiong, G. C. [1 ]
Lian, G. J. [1 ]
Yang, Y. C. [1 ]
Yang, J. B. [1 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 12期
基金：
中国国家自然科学基金;
关键词：
TRANSITION; MEMORY; FILMS; JUNCTIONS; DEVICES;
D O I：
10.1063/1.3569586
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have demonstrated that the resistance switching (RS) effect can be controlled by the modification of the electrode configurations and the carrier densities in the Ag/SrTiO3 and Ag/Nb-doped SrTiO3(Nb:STO) structures. The elimination of the Schottky junction in the metal/Nb:STO completely destroys the RS effect, which suggests that the RS effect originates from the modification of Schottky-like barrier formed at the interface of metal/Nb: STO. The rectifying I-V curves revealed that the change in resistance was attributed to the trapping or detrapping carriers at the interface. The carrier density plays an important role in the determination of RS effect. The presence of the RS in SrTiO3 requires an appropriate doping level to provide conditions for trapping carriers at the interface. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569586]
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页数：3
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