1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer

被引：31

作者：

Takemasa, K ^{[1
]}

Munakata, T

Kobayashi, M

Wada, H

Kamijoh, T

机构：

[1] Oki Elect Ind Co Ltd, Semicond Technol Lab, Res & Dev Grp, Hachioji, Tokyo 193, Japan

[2] Oki Elect Ind Co Ltd, Component Div, Hachioji, Tokyo 193, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 04期

关键词：

characteristic temperature; semiconductor lasers; strained quantum wells;

D O I：

10.1109/68.662572

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

1.3-mu m AlGaInAs-AlGaInAs strained multiple-quantum-well (MQW) lasers with a p-AlInAs electron stopper layer have been fabricated. The electron stopper layer was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-SCH. The characteristic temperatures of the threshold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum operating temperature of 155 degrees C was achieved, which was 20 degrees C higher than that without the stopper layer.

引用

页码：495 / 497

页数：3

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