Temperature dependence of gain characteristics in 1.3-μm AlGaInAs/InP strained multiple-quantum-well semiconductor lasers

We have measured the temperature dependence of the gain characteristics in 1.3-mum AlGaInAs/InP strained multiple-quantum-well (MQW) semiconductor lasers using Haliki-Paoli method. By measuring the temperature dependences of the peak gain value and the gain peak wavelength, we evaluated the temperature dependences of the threshold current and the oscillation wavelength, respectively. The small temperature dependence of the threshold current in AlGaInAs/InP lasers is caused by the small temperature dependence of the transparency current density which is represented by the char acteristic temperature T-Jtr of 116K in AlGaInAS/InP high T-0 lasers. The temperature dependence of the oscillation wavelength is slightly larger than that in GaInAsP/InP lasers because of the larger temperature dependence of bandgap wavelength 0.55 nm/K.