Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers

被引：89
|
作者：
Selmic, SR [1 ]
Chou, TM
Sih, JP
Kirk, JB
Mantie, A
Butler, JK
Bour, D
Evans, GA
机构：
[1] So Methodist Univ, Dept Elect Engn, Sch Engn & Appl Sci, Dallas, TX 75275 USA
[2] Laser Diode Inc, Edison, NJ 08820 USA
[3] Agilent, Palo Alto, CA 94304 USA
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2001年 / 7卷 / 02期
关键词：
optical waveguide theory; quantum theory; quantum-well lasers; ridge waveguides; semiconductor lasers;
D O I：
10.1109/2944.954148
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comprehensive design method for long wavelength strained quantum-well lasers is applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3-mum lasers for communication systems. The method includes multiband effective mass theory and electromagnetic waveguide theory. The resulting AlGaInAs-InP laser has a threshold current of 12.5 mA at 25 degreesC, with a slope efficiency of 0.43 W/A, at 77 K orgreater characteristic temperature, a 38 degrees perpendicular far-field beam divergence, and will operate at temperatures in excess of 100 degreesC.
引用
收藏
页码：340 / 349
页数：10
相关论文
共 50 条
12345