Comparison of 1.3-μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes with/without GaInAsP and AlGaInAs graded-composition layers

被引：0
|
作者：
Wu, MY [1 ]
Lei, PH
Tsai, CL
Hu, CW
Wu, MC
Ho, WJ
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[2] Diwan Coll Management, Dept Comp Sci Engn, Madou 721, Taiwan
[3] Changhwa Telecom Co Ltd, Telecommun Labs, Adv Tech Lab, Yangmei 326, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 12B期
关键词：
semiconductor lasers; AlGaInAs/InP;
D O I：
10.1143/JJAP.42.L1507
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, we have fabricated the 1.3-mum Al0.20Ga0.11In0.69As/Al0.30Ga0.26In0.44As strain-compensated multiple-quantum-well laser diodes (LDs) with the GaInAsP and AlGaInAs graded-composition layers above the upper and below the lower cladding layers, respectively. This new LD structure exhibits a lower threshold current of 9mA, a higher characteristic temperature of 80 K between 20 and 70degreesC, a little red-shift rate of 0.4 nm/degreesC and a higher relaxation frequency of 8.14 GHz at 80 mA and 20degreesC. Without coupling loss and damping factor, the 3 dB bandwidth of 13.1 GHz can be achieved. These characteristics are better than those LDs without the graded-composition layers.
引用
收藏
页码：L1507 / L1508
页数：2
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