Very low threshold current operation of 1.3-μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes

被引：5
|
作者：
Wu, MY
Yang, CD
Lei, PH
Wu, MC [1 ]
Ho, WJ
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[2] Changhwa Telecom Co Ltd, Telecommun Labs, Adv Tech Lab, Yangmei 326, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 6B期
关键词：
D O I：
10.1143/JJAP.42.L643
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this Letter, we report on a new structure of 1.3-mum AlGaInAs strain-compensated multiple-quantum-well laser diodes (SC-MQW LDs) by introducing an AlGaInAs graded-composition layer into the outside of the conventional graded-index separate-confinement heterostructure (GRINSCH) structure to enhance the carrier injection and thus reduce the threshold current. This new-structure 3-mum ridge-stripe LDs without facet coating exhibit an extremely low threshold current of 9 mA, a light output power of 20 mW at 100 mA, a characteristic temperature of 80 K in the operating temperature of 20-70degreesC, an operating temperature exceeding 90degreesC with a threshold current lower than 30 mA, and a red-shift rate of 0.4 nm/degreesC.
引用
收藏
页码：L643 / L645
页数：3
相关论文
共 50 条
  • [1] High-power and low-threshold-current operation of 1.3 μm strain-compensated AlGaInAs/AlGaInAs multiple-quantum-well laser diodes
    Lei, PH
    Wu, MY
    Lin, CC
    Ho, WJ
    Wu, MC
    [J]. SOLID-STATE ELECTRONICS, 2002, 46 (12) : 2041 - 2044
  • [2] Comparison of 1.3-μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes with/without GaInAsP and AlGaInAs graded-composition layers
    Wu, MY
    Lei, PH
    Tsai, CL
    Hu, CW
    Wu, MC
    Ho, WJ
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (12B): : L1507 - L1508
  • [3] Comparison of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes with/without GaInAsP and AlGaInAs Graded-Composition Layers
    Wu, Ming-Yuan
    Lei, Po-Hsun
    Tsai, Chia-Lung
    Hu, Chih-Wei
    Wu, Meng-Chyi
    Ho, Wen-Jeng
    [J]. 2003, Japan Society of Applied Physics (42):
  • [4] 1.3-μm n-type modulation-doped AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes
    Lei, PH
    Lin, CC
    Ho, WJ
    Wu, MC
    Laih, LW
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (07) : 1129 - 1135
  • [5] Low threshold current and high temperature operation of 1.55 μm strain-compensated multiple quantum well AlInAs/AlGaInAs laser diodes
    Lin, CC
    Liu, KS
    Wu, MC
    Shiao, HP
    [J]. ELECTRONICS LETTERS, 1998, 34 (17) : 1667 - 1668
  • [6] High-temperature and low-threshold-current operation of 1.5 μm AlGaInAs/InP strain-compensated multiple quantum well laser diodes
    Lin, CC
    Liu, KS
    Wu, MC
    Shiao, HP
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (6A): : 3309 - 3312
  • [7] Strain-compensated 1.3-μm AlGaInAs quantum-well lasers with multiquantum barriers at the cladding layers
    Pan, JW
    Chen, MH
    Chyi, JI
    Shih, TT
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (01) : 9 - 11
  • [8] 1.3 μm AlGaInAs/AlGaInAs strain-compensated multiple-quantumwell index-coupled distribution feedback laser diodes
    Lei, Po-Hsun
    [J]. SOLID-STATE ELECTRONICS, 2007, 51 (06) : 925 - 930
  • [9] Facet-coating effects on the 1.3-μm strained multiple-quantum-well AlGaInAs/InP laser diodes
    Lin, CC
    Liu, KS
    Wu, MC
    Ko, SC
    Wang, WH
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12A): : 6399 - 6402
  • [10] Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3 μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes
    Lei, PH
    Yang, CD
    Wu, MY
    Wu, MC
    Cheng, KY
    Lin, CC
    Ho, WJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (02): : 623 - 628
12345