High-temperature operation of 1.3μm AlGaInAs strained multiple quantum well lasers

High-temperature operation of 1.3 mu m AlGaInAs/InP strained multiple quantum well lasers is demonstrated. An excellent CW characteristic temperature of 111K was obtained between 20 and 80 degrees C and a record high operating temperature of 210 degrees C was achieved with a 700 mu m long laser under pulse excitation. Power reductions at a constant current with increasing temperature were also evaluated at 80 degrees C to be -1.27 and -1.67dB under pulse and CW excitations, respectively.