Electrical and Photoelectrochemical Properties of Thin MoS2 Films Produced by Electrodeposition

被引:0
|
作者
Majidzade, V. A. [1 ]
Jafarova, S. F. [1 ]
Kasimogli, I [2 ]
Eminov, Sh O. [2 ]
Aliyev, A. Sh [1 ]
Azizova, A. N. [1 ]
Tagiyev, D. B. [1 ]
机构
[1] Azerbaijan Acad Sci, Nagiyev Inst Catalysis & Inorgan Chem, AZ-1143 Baku, Azerbaijan
[2] Azerbaijan Acad Sci, Abdullaev Inst Phys, AZ-1143 Baku, Azerbaijan
关键词
electrodeposition; electrical conductivity; current-voltage characteristic; Raman spectroscopy; photoelectrochemical properties; TEMPERATURE;
D O I
10.1134/S0020168521040105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin n-type MoS2 films have been produced by electrochemical deposition from aqueous electrolytes and some of their electrical and photoelectrochemical properties have been studied using advanced characterization techniques (X-ray diffraction, scanning electron microscopy, and Raman spectroscopy). We have measured the current-voltage characteristics of the films and their electrical conductivity as a function of temperature and evaluated their temperature sensitivity coefficient (B = 16 376 K), the temperature coefficient of their electrical resistance (alpha = 0.182 K-1 at 400 K and 0.095 K-1 at 500 K), and their band gap (E-g = 1.41 eV). The results demonstrate that thin MoS2 films have attractive photoelectrochemical properties and can be used in solar energy conversion.
引用
收藏
页码:331 / 336
页数:6
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