MoS2 thin films prepared by sulfurization

被引:8
|
作者
Sojkova, M. [1 ]
Chromik, S. [1 ]
Rosova, A. [1 ]
Dobrocka, E. [1 ]
Hutar, P. [1 ]
Machajdik, D. [1 ,2 ]
Kobzev, A. P. [2 ]
Hulman, M. [1 ]
机构
[1] SAS, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia
[2] Joint Inst Nucl Res, Dubna, Moscow Region, Russia
关键词
Transition metal dichalcogenides (TMD); sulfurization; Mo films; c-plane sapphire; silicon; magnetron sputtering; Raman spectroscopy; RBS; TRANSITION-METAL DICHALCOGENIDES; GROWTH; DEPOSITION; MONOLAYER; LAYERS;
D O I
10.1117/12.2273846
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Sulfurization of a Mo layer is one of the most used methods for preparation of thin MoS2 films. In the method, a sulfur powder and Mo covered substrate are placed in different positions within a furnace, and heated separately. This requires a furnace having at least two zones. Here, we present a simplified version of the method where a one-zone tube furnace was used. A molybdenum film on a substrate and a sulfur powder were placed in the center of the furnace and heated at temperatures above 800 degrees C. Mo films transform into MoS2 in vapors of sulphur at high temperatures. As-prepared films were characterized by number of techniques including X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman, Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS). It appears that one-zone sulfurization, with just one annealing temperature used, is a suitable method for fabrication of MoS2 thin films. This method is fast, cheap and easy to scale up.
引用
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页数:7
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