Electrical and Photoelectrochemical Properties of Thin MoS2 Films Produced by Electrodeposition

Thin n-type MoS2 films have been produced by electrochemical deposition from aqueous electrolytes and some of their electrical and photoelectrochemical properties have been studied using advanced characterization techniques (X-ray diffraction, scanning electron microscopy, and Raman spectroscopy). We have measured the current-voltage characteristics of the films and their electrical conductivity as a function of temperature and evaluated their temperature sensitivity coefficient (B = 16 376 K), the temperature coefficient of their electrical resistance (alpha = 0.182 K-1 at 400 K and 0.095 K-1 at 500 K), and their band gap (E-g = 1.41 eV). The results demonstrate that thin MoS2 films have attractive photoelectrochemical properties and can be used in solar energy conversion.