Low-k/Cu interconnect integration with low-damage ash using atomic hydrogen

被引：0

作者：

Tomioka, Kazuhiro ^{[1
]}

Kondo, Seiichi ^{[1
]}

Ohhashi, Naofumi ^{[1
]}

Suzuki, Takamasa ^{[1
]}

Soda, Eiichi ^{[1
]}

Kobayashi, Nobuyoshi ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

Advanced Metallization Conference 2006 (AMC 2006) | 2007年

关键词：

low-k; ash; hydrogen; catalyzer;

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

An ash process using atomic hydrogen which is generated by heated tungsten catalyzer (CAT-ASH) was characterized in terms of process-induced damage. Dielectric constant (k) was reduced after the CAT-ASH process with etched blanket low-k film. No sidewall damage layer was observed in the case of performing diluted HF dip experiment. Moreover, High (>90%) 200nm pitch via-chain yield was obtained compared to a conventional ash process.

引用

页码：61 / 66

页数：6

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