Low-k/Cu interconnect integration with low-damage ash using atomic hydrogen

被引：0

作者：

Tomioka, Kazuhiro ^{[1
]}

Kondo, Seiichi ^{[1
]}

Ohhashi, Naofumi ^{[1
]}

Suzuki, Takamasa ^{[1
]}

Soda, Eiichi ^{[1
]}

Kobayashi, Nobuyoshi ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

Advanced Metallization Conference 2006 (AMC 2006) | 2007年

关键词：

low-k; ash; hydrogen; catalyzer;

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

An ash process using atomic hydrogen which is generated by heated tungsten catalyzer (CAT-ASH) was characterized in terms of process-induced damage. Dielectric constant (k) was reduced after the CAT-ASH process with etched blanket low-k film. No sidewall damage layer was observed in the case of performing diluted HF dip experiment. Moreover, High (>90%) 200nm pitch via-chain yield was obtained compared to a conventional ash process.

引用

页码：61 / 66

页数：6

共 50 条

[31] Quantitative projections of reliability and performance for low-k/Cu interconnect systems
Banerjee, Kaustav
Mehrotra, Amit
Hunter, William
Saraswat, Krishna C.
Goodson, Kenneth E.
Wong, S.Simon
Annual Proceedings - Reliability Physics (Symposium), 2000, : 354 - 358
[32] Effects of dielectric liners on TDDB lifetime of a Cu/Low-k interconnect
Tsui, TY
Matz, P
Willecke, R
Zielinski, E
Kim, T
Haase, G
McPherson, J
Singh, A
McKerrow, AJ
PROCEEDINGS OF THE IEEE 2004 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2004, : 78 - 80
[33] Thermomechanical stress analysis of Cu/low-k dielectric interconnect schemes
Mathewson, A
De Oca, CGM
Foley, S
MICROELECTRONICS RELIABILITY, 2001, 41 (9-10) : 1637 - 1641
[34] Characterization of thermal stresses of Cu/low-k submicron interconnect structures
Rhee, SH
Du, Y
Ho, PS
PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, : 89 - 91
[35] EXPLORATION ON ELECTROMIGRATION SHORT LENGTH EFFECT OF LOW-K CU INTERCONNECT
Zhao, Xiangfu
2016 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC), 2016,
[36] Direct CMP on porous low-k film for damage-less Cu integration
Kondo, S.
Fukay, K.
Ohashi, N.
Miyazaki, T.
Nagano, H.
Wada, Y.
Ishibashi, T.
Kato, M.
Yoneda, K.
Soda, E.
Nakao, S.
Ishigami, K.
Kobayashi, N.
PROCEEDINGS OF THE IEEE 2006 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2006, : 164 - 166
[37] Development of Voltammetry-based Techniques for Characterization of Porous Low-k/Cu Interconnect Integration Reliability
Kim, Choong-Un
Chen, L. S.
Michael, N.
Bang, W. H.
Park, Young-Joon
Ryan, E. Todd.
King, S.
SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 11, 2011, 35 (04): : 757 - 771
[38] Chip-Packaging Interaction in Cu/Very Low-k Interconnect
Wei, Hsiu-Ping
Tsai, Hao-Yi
Liu, Yu-Wen
Chen, Hsien-Wei
Jeng, Shin-Puu
Yu, Douglas C. H.
PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2009, : 143 - 145
[39] Stress migration study of Cu interconnect with various low-K dielectrics
Lin, MW
Hsieh, CH
Yang, CW
Tsai, MH
Shue, SL
Yu, CH
Liang, MS
ADVANCED METALLIZATION CONFERENCE 2001 (AMC 2001), 2001, : 457 - 463
[40] Qualification of resist strip process for ultra low-k/Cu interconnect
Xu, H
Shen, A
Tarasov, V
White, B
Wolf, J
ULTRA CLEAN PROCESSING OF SILICON SURFACES VII, 2005, 103-104 : 345 - 348

← 1 2 3 4 5 →