Stress migration study of Cu interconnect with various low-K dielectrics

被引：0

作者：

Lin, MW ^{[1
]}

Hsieh, CH ^{[1
]}

Yang, CW ^{[1
]}

Tsai, MH ^{[1
]}

Shue, SL ^{[1
]}

Yu, CH ^{[1
]}

Liang, MS ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, Res & Dev, Hsinchu, Taiwan

来源：

ADVANCED METALLIZATION CONFERENCE 2001 (AMC 2001) | 2001年

关键词：

copper; interconnect; low-K; stress; migration; package; dielectric;

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Three different kinds of low-K materials were selected for stress migration (SM) study. The critical temperature ranging from 150degreesC to 400degreesC was investigated. The difference of failure rate of stress migration among those three low-K materials has been observed. The resistance measurement for monitoring its change was executed at wafer level and package level. The experimental results showed the consistence between wafer level and package level testing. From the results of package level testing, we can screen out low-K material with better lifetime from failure rate. The failure analysis was done after thermal stress. Finally, the comparison of lifetime between low-K materials and FSG was examined.

引用

页码：457 / 463

页数：7

共 50 条

[1] Reliability of low-k interconnect dielectrics
Haase, Gaddi
2012 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2012, : 35 - 35
[2] Cu/ultra low-k interconnect with all-spin-on-dielectrics process
Arase, SY
Maeda, N
Kawakami, H
Ichiki, N
Sumiya, K
Takimoto, Y
Homma, Y
Saito, H
Tada, M
Shirato, K
Kokubo, T
Advanced Metallization Conference 2005 (AMC 2005), 2006, : 109 - 113
[3] Triaxial stress distributions in Cu/low-k interconnect features
Murray, Conal E.
Besser, Paul R.
Ryan, E. Todd
Jordan-Sweet, Jean L.
APPLIED PHYSICS LETTERS, 2011, 98 (06)
[4] Thermomechanical stress analysis of Cu/low-k dielectric interconnect schemes
Mathewson, A
De Oca, CGM
Foley, S
MICROELECTRONICS RELIABILITY, 2001, 41 (9-10) : 1637 - 1641
[5] Measurements of effective thermal conductivity for advanced interconnect structures with various composite low-K dielectrics
Chen, F
Gill, J
Harmon, D
Sullivan, T
Li, B
Strong, A
Rathore, H
Edelstein, D
Yang, CC
Cowley, A
Clevenger, L
2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 68 - 73
[6] Thermal stress characteristics of Cu/oxide and Cu/low-k submicron interconnect structures
Rhee, SH
Du, Y
Ho, PS
JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) : 3926 - 3933
[7] Thermal stress characteristics of Cu/oxide and Cu/low-k submicron interconnect structures
Rhee, S.-H. (seung-hyun.rhee@amd.com), 1600, American Institute of Physics Inc. (93):
[8] Role of Cu in TDDB of low-k dielectrics
Lloyd, J. R.
Ponoth, S.
Liniger, E.
Cohen, S.
2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL, 2007, : 410 - +
[9] Stress modeling of Cu/Low-k BEoL - Application to stress migration
Zhai, CJ
Yao, HW
Besser, PR
Marathe, A
Blish, RC
Erb, D
Hau-Riege, C
Taylor, S
Taylor, KO
2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 234 - 239
[10] Influence of interconnect dimensions on electromigration for Cu/Low-k interconnect structure: An analytical study
Joshi, Bhavana N.
Mahajan, A. M.
IPFA 2008: PROCEEDINGS OF THE 15TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2008, : 181 - 184

← 1 2 3 4 5 →