Current status of GaN heterojunction bipolar transistors

被引：0

作者：

Feng, M ^{[1
]}

Price, RK ^{[1
]}

Chan, R ^{[1
]}

Chung, T ^{[1
]}

Dupuis, RD ^{[1
]}

Keogh, DM ^{[1
]}

Li, JC ^{[1
]}

Conway, AM ^{[1
]}

Qiao, D ^{[1
]}

Raychaudhuri, S ^{[1
]}

Asbeck, PM ^{[1
]}

机构：

[1] Univ Illinois, Urbana, IL 61801 USA

来源：

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年

关键词：

D O I：

10.1109/BIPOL.2004.1365737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper reviews the current state-of-the-art GaN HBT results, and discusses advantages of GaN HBTs over GaN HFETs and other material systems for the high power amplifier applications. Technical difficulties associated with GaN HBTs such as MOCVD material growth, ICP dry etching, and ohmic contact issues are discussed. Methods for the elimination of technical issues and the authors recommended approaches for practical realization of the GaN HBT-based rf high power amplifiers will be described.

引用

页码：26 / 31

页数：6

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