High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base

被引：66
|
作者：
Makimoto, T [1 ]
Kumakura, K [1 ]
Kobayashi, N [1 ]
机构：
[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 03期
关键词：
D O I：
10.1063/1.1387261
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaN/GaN double heterojunction bipolar transistors have been fabricated using p-type InGaN as a base layer. The structures were grown on SiC substrates by metalorganic vapor phase expitaxy and defined by electron cyclotron resonance plasma etching. The In mole fraction in the base layer and its thickness were 0.06 and 100 nm, respectively. The Mg doping concentration in the base layer was 1x10(19) cm(-3) corresponding to a hole concentration of 5x10(18) cm(-3) at room temperature. From their common-emitter current-voltage characteristics, the maximum current gain of 20 was obtained at room temperature. (C) 2001 American Institute of Physics.
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页码：380 / 381
页数：2
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