GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base

被引：2

作者：

Yan, Shumeng ^{[1
,2
]}

Zhou, Yu ^{[1
,2
,3
,4
]}

Liu, Jianxun ^{[1
,2
,3
,4
]}

Zhong, Yaozong ^{[1
,2
,3
,4
]}

Sun, Xiujian ^{[1
,2
]}

Chen, Xin ^{[1
,2
,3
,4
]}

Guo, Xiaolu ^{[1
,2
]}

Li, Qian ^{[1
,2
,3
,4
]}

Sun, Qian ^{[1
,2
,3
,4
]}

Yang, Hui ^{[1
,2
,3
,4
]}

机构：

[1] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[3] Guangdong Inst Semicond Micronano Mfg Technol, Foshan 528000, Peoples R China

[4] Jiangxi Zhongke Roland Photoelect Co Ltd, Res & Dev Dept, Nanchang 330200, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 04期

基金：

国家重点研发计划;

关键词：

Double heterojunction bipolar transistors; Indium; Silicon; Sun; Piezoelectric polarization; Heterojunctions; Semiconductor process modeling; Band discontinuity; current gain; GaN-based double-heterojunction bipolar transistor (DHBT); graded base intercept voltage; piezoelectric polarization;

D O I：

10.1109/TED.2023.3243585

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

influence of energy band structure on the electrical characteristics of GaN-based double-heterojunction bipolar transistors (DHBTs) has been stud-ied through both simulation and fabrication. According to the simulation result, a novel DHBT structure with a composition graded base was grown and fabricated. A long minority carrier lifetime of 4.08 ns has been achieved for the composition graded p-InGaN base with a greatly improved material quality. The indium composition grading of the p-InGaN base layer combined with Si doping profile tuning for the collector layer was proposed to eliminate the energy barrier usually formed at the conventional GaN/InGaN/GaN base-collector (B-C) junction interface due to the band discontinuity and polarization effect. As a result, the as-fabricated DHBT presents a high intercept voltage of 225 V extracted from the I-C-V-CE curves and a high current gain of 49.

引用

页码：1613 / 1621

页数：9

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