Influence of Thickness of p-InGaN Layer on the Device Physics and Material Qualities of GaN-Based LEDs With p-GaN/InGaN Heterojunction

被引:9
|
作者
Lin, Zhiting [1 ,2 ]
Chen, Xiaofeng [1 ,2 ]
Zhu, Yuhan [3 ]
Chen, Xiwu [4 ]
Huang, Liegeng [1 ,2 ]
Li, Guoqiang [2 ,5 ,6 ]
机构
[1] State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
[2] South China Univ Technol, Engn Res Ctr Solid State Lighting & Its Informati, Guangzhou 510640, Guangdong, Peoples R China
[3] Lanzhou Univ, Chem & Chem Engn Sch, Lanzhou 730030, Gansu, Peoples R China
[4] Choicore Optoelect Co Ltd, Heyuan 517001, Peoples R China
[5] South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
[6] South China Univ Technol, Dept Elect Mat, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
Heterojunction; InGaN; light-emitting diodes (LEDs); multiple quantum wells (MQWs); LIGHT-EMITTING-DIODES; CARRIER CONCENTRATION; HALL-MOBILITY; GROWTH; WAFERS; FILMS; BLUE;
D O I
10.1109/TED.2018.2872525
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence of the thickness of a p-InGaN layer on the device physics and the material qualities of GaN-based light-emitting diodes (LEDs) are investigated in both numerical and experimental ways. A promoted structure of p-GaN/In0.05Ga0.95N (80/120 nm) heterojunction has been found to remarkably improve the LED's performance. It is demonstrated by the experimental results that the light output power and wall-plug efficiency of such LED increase by 44.63% and 60.66% with a comparison to the conventional LED, respectively. Theoretical calculation reveals that thickening the p-InGaN layer will increase the number of holes accumulating in the p-GaN/InGaN heterojunction and modify the energy band profile of electron blocking layer, which makes it more favorable for carriers to inject into multiple quantum wells (MQWs). However, it is unfortunately found that overthickening the p-InGaN layer will make its crystalline quality degrade and finally affect the MQWs. The thickness of the p-InGaN layer should be carefully controlled at about 120 nm; otherwise, the performance of LED will be severely damaged by the increasing electrical resistance and the enhanced nonradiative recombination in MQWs, which is resulted from the material degradation in p-InGaN layer and MQWs. This paper demonstrates a possibility for achieving high-performance LEDs with the p-GaN/InGaN heterojunction and is of great interest for the commercial development of GaN-based LEDs.
引用
收藏
页码:5373 / 5380
页数:8
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