The effect of a surface layer capping p-InGaN/p-GaN superlattices on the contact to p-GaN

被引：2

作者：

Yin, Yian ^{[1
]}

Liu, Baolin ^{[1
]}

Zhang, Baoping ^{[1
]}

Lin, Guoxing ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2008年 / 43卷 / 03期

关键词：

P-InGaN/p-GaN SLs; polarization-induced effect; ohmic contact; CTLM;

D O I：

10.1016/j.spmi.2007.08.003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this study, the influence of the surface layer (p-InGaN or p-GaN) capping p-InGaN/p-GaN superlattices (SLs) on the contact to p-type GaN was investigated. It was found that the specific contact resistance (rho(c)) to p-type GaN is lower when using p-InGaN as the surface layer. The lowest value of p, was 1.99 x 10(-4) Omega cm(2) at room temperature. It was also found that low temperature growth of the p-GaN layers in the SLs is beneficial for lowering the ohmic contact resistance. Unlike Ni/Au deposited directly on p-GaN (without the strained p-InGaN/p-GaN SLs), Ni/Au deposited on p-InGaN/p-GaN SLs produces ohmic behavior even before annealing. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：162 / 167

页数：6

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