KINK EFFECT ON THE BASE CURRENT OF HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：2

作者：

LIOU, JJ

LIOU, LL

HUANG, CI

机构：

[1] Solid State Electronics Directorate Wright Laboratory Wright-Patterson Air Force Base OH

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 08期

关键词：

D O I：

10.1016/0038-1101(93)90205-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：1222 / 1224

页数：3

共 50 条

[1] THE BASE COLLECTOR HETEROJUNCTION EFFECT IN SIGE BASE BIPOLAR-TRANSISTORS
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