INVESTIGATION OF EMITTER CURRENT CROWDING EFFECT IN HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：3
|
作者：
FOURNIER, V
DANGLA, J
DUBONCHEVALLIER, C
机构：
[1] France Telecom, Centre National d'Etudes des Telecommunications, PAB, Laboratoire de Bagneux, 92225 Bagneux cedex, 196 avenue Henri Ravera
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 20期
关键词：
HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTOR DEVICE TESTING;
D O I：
10.1049/el:19931197
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The emitter current crowding effect in heterojunction bipolar transistors (HBTs) has been investigated using a specific test device. This test device, which is a heterojunction bipolar transistor with two separate base fingers, also allows evaluation of the HBT base resistance. By use of this test device, the Letter demonstrate that a 3mum large HBT does not exhibit the emitter current crowding effect. An analysis of the saturated regime is also presented.
引用
收藏
页码：1799 / 1800
页数：2
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