The effect of vertical emitter ballasting resistors on the emitter current crowding effect in heterojunction bipolar transistors

被引：8
|
作者：
Chang, YC
Du, GT
Song, JF
Wang, SW
Luo, HL
Ge, WK
Wang, JN
Wang, Y
机构：
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Optoelect, Changchun 130023, Jilin Province, Peoples R China
[2] Jilin Univ, Coll Comp Sci, Changchun 130061, Jilin Province, Peoples R China
[3] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon 130061, Hong Kong, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 11期
关键词：
heterojunction bipolar transistors; ballasting resistors; current crowding effect;
D O I：
10.1016/S0038-1101(02)00184-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to improve thermal stability and extend their safe operation region, epitaxial emitter ballasting resistors have been incorporated into power heterojunction bipolar transistors (HBTs). In this report, we show that this lightly doped layer not only can function as ballasting resistors used in multi-finger power HBT cells, but also can reduce the emitter current crowding effect which is an important limitation in bipolar transistors operating at high emitter current densities. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1997 / 2000
页数：4
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