On the emitter ledge length effect for InGaP/GaAs heterojunction bipolar transistors

被引:1
|
作者
Fu, Ssu-I
Cheng, Shiou-Ying
Lai, Po-Hsien
Tsai, Yan-Ying
Hung, Ching-Wen
Liu, Wen-Chau
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan
关键词
potential saddle point; recombination rate; electron density; ledge length;
D O I
10.1143/JJAP.46.L74
中图分类号
O59 [应用物理学];
学科分类号
摘要
The emitter ledge length effect on the performance of InGaP/GaAs heterojunction bipolar transistors is comprehensively studied. It is shown that the undesired potential saddle point at the edge of emitter ledge is substantially presented. At the saddle point, the electron density and recombination rate are decreased with increasing the emitter ledge length. However, the longer emitter ledge length increases the base-collector junction area which in turn deteriorates the high frequency performance. Therefore, the length of emitter ledge should be,carefully considered. Based on the theoretical analysis and experimental results, the optimum emitter ledge length is near 0.8 mu m.
引用
收藏
页码:L74 / L76
页数:3
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