Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

被引：2
|
作者：
Wu, Yi-Chen [1 ]
Tsai, Jung-Hui [2 ]
Chiang, Te-Kuang [1 ]
Wang, Fu-Min [1 ]
机构：
[1] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan
[2] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 802, Taiwan
来源：
SEMICONDUCTORS | 2015年 / 49卷 / 10期
关键词：
MOLECULAR-BEAM EPITAXY; PERFORMANCE;
D O I：
10.1134/S1063782615100279
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this article the characteristics of In0.49Ga0.51P/GaAs/GaAs0.975Bi0.025 and In0.49Ga0.51P/GaAs heterojunction bipolar transistor (HBTs) are demonstrated and compared by two-dimensional simulated analysis. As compared to the traditional InGaP/GaAs HBT, the studied InGaP/GaAs/GaAsBi HBT exhibits a higher collector current, a lower base-emitter (B-E) turn-on voltage, and a relatively lower collector-emitter offset voltage of only 7 mV. Because the more electrons stored in the base is further increased in the InGaP/GaAs/GaAsBi HBT, it introduces the collector current to increase and the B-E turn-on voltage to decrease for low input power applications. However, the current gain is slightly smaller than the traditional InGaP/GaAs HBT attributed to the increase of base current for the minority carriers stored in the GaAsBi base.
引用
收藏
页码：1361 / 1364
页数：4
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