Reliability investigation of InGaP/GaAs heterojunction bipolar transistors

被引：28

作者：

Bahl, SR ^{[1
]}

Camnitz, LH ^{[1
]}

Houng, D ^{[1
]}

Mierzwinski, M ^{[1
]}

机构：

[1] HEWLETT PACKARD CORP,EESOF DIV,SANTA ROSA,CA 95403

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 09期

关键词：

D O I：

10.1109/55.536288

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

During elevated-temperature bias stress, InGaP/GaAs HBT's grown by MOCVD show a medium term degradation in current gain of about 20%, with an activation energy of 0.64 eV. They also show a corresponding decrease in base resistance and an increase in turn-on voltage. InGaP/GaAs HBT's grown by GSMBE, however, do not show this degradation. SIMS measurements show a five times greater than GSMBE-epi hydrogen concentration of about 10(19) cm(-3) in the base layer of the MOCVD-grown epi. The degradation can be explained by acceptor depassivation due to hydrogen out-diffusion from the epi during stress.

引用

页码：446 / 448

页数：3

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