InGaP heterojunction bipolar transistors

被引：0

作者：

Pan, N ^{[1
]}

Welser, RE ^{[1
]}

Lutz, CR ^{[1
]}

Elliot, J ^{[1
]}

Vu, DP ^{[1
]}

机构：

[1] Kopin Corp, Taunton, MA 02178 USA

来源：

COMPOUND SEMICONDUCTOR POWER TRANSISTORS AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXIX) | 1998年 / 98卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

InGaP/GaAs based Heterojunction Bipolar Transistors are becoming the leading device for a wide variety of applications including power amplifiers, high speed A/D converters, low noise receivers, and low phase noise oscillators. This device can be designed to operate from L-band to millimeter waves. The excellent reliability of InGaP HBTs at high current densities and high device junction temperatures offers increased performance margins for high frequency and high power applications. At J(c) = 25 kA/cm(2) and T-j = 264 C, no device failures were reported out to 10,000 hours. Reliability data extracted at a higher junction temperature of up to 360 C and at a current density of 60 kA/cm(2) showed an extrapolated MTTF of 5 x 10(5) hours at T-j = 150 C.

引用

页码：71 / 81

页数：11

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